@article {1367-2630-18-2-025012,
	title = {All-Si valley-Hall photonic topological insulator},
	journal = {New Journal of Physics},
	volume = {18},
	year = {2016},
	pages = {025012},
	abstract = {An all-Si photonic structure emulating the quantum-valley-Hall effect is proposed. We show that it acts as a photonic topological insulator (PTI), and that an interface between two such PTIs can support edge states that are free from scattering. The conservation of the valley degree of freedom enables efficient in- and out-coupling of light between the free space and the photonic structure. The topological protection of the edge waves can be utilized for designing arrays of resonant time-delay photonic cavities that do not suffer from reflections and cross-talk.},
	url = {http://stacks.iop.org/1367-2630/18/i=2/a=025012},
	author = {Tzuhsuan Ma and Gennady Shvets}
}
