Citation:Rajasekhara S, III NB, Zorman CA, Jegenyes N, Ferro G, Shvets G, Ferreira PJ, Kovar D. The influence of impurities and planar defects on the infrared properties of silicon carbide films. Appl. Phys. Lett. [Internet]. 98 (191904).Download CitationLast updated on 08/07/2015